RAMSESϵ�Ђ������ɼ�Ŀ��(bi��o)���V��Ϣ��ͨ�^(gu��)�������V�ļ�������ȡ���c�о�Ŀ��(bi��o)���P(gu��n)�Ĺ��V��Ϣ�c�y(c��)����(sh��)��(j��)��ԓ�x���龫�_�ĸ߹��V������(y��ng)���ṩ�O�����ɜy(c��)��ݗ�նȺ�ݗ���ȣ�������ˮ�Мy(c��)����Ҳ�����ڿ՚��Мy(c��)�������c(di��n)��
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��һ� RAMSES-ARC �߹��VUV-VIS ݗ���Ȃ�����
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field of view: 7° in air
���L(zh��ng): 320 - 950 nm
�z�y(c��)��: 256 ͨ����Ĥ������
���V�ɘ�: 3.3nm/pixel
���V����: 0.3nm
��(sh��)�Hʹ��ͨ��: 190
����Ͷ�(at 200nm): 1wm-2 nm-1 sr -1
�ڶ�� RAMSES-ACC-VIS �߹��VUV-VIS ����ݗ�նȂ�����
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���L(zh��ng): 320 - 950 nm
�z�y(c��)��: 256 channel silicon photodiode array
���V�ɘ�: 3.3nm/pixel
���V����: 0.3nm
��(sh��)�Hʹ��ͨ��: 190
����Ͷ�(4 ms integration time):
10 W m-2 nm-1 (at 400nm)
8 W m-2 nm-1 (at 500nm)
14 W m-2 nm-1 (at 700nm)
����NEI(8 sec integration time):
0.4 μW m-2 nm-1 (at 400nm)
0.4 μW m-2 nm-1 (at 500nm)
0.6 μW m-2 nm-1 (at 700nm)
����� RAMSES-ACC-UV �߹��V��������ݗ�նȂ�����
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�ռ������: ���ҙz�y(c��)��
���L(zh��ng): 280 - 500 nm
�z�y(c��)��: 256 ͨ����������O�����
���V�ɘ�: 2.2 nm/pixel
���V����: 0.2 nm
��(sh��)�Hʹ��ͨ��: 100
����Ͷ�(4ms integration time):
20 W m-2 nm-1 sr -1 (at 300nm)
17 W m-2 nm-1 sr -1 (at 360nm)
18W m-2 nm-1 sr -1 (at 500nm)
����NEI(8ms integration time):
0.85 μW m-2 nm-1 sr -1 (at 300nm)
0.75 μW m-2 nm-1 sr -1 (at 360nm)
0.80 μW m-2 nm-1 sr -1 (at 500nm)
����� RAMSES-ASC-VIS �߹��VUV-VIS Scalarݗ�նȂ�����
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�ռ������: ���Ιz�y(c��)�� 2 Pi
���L(zh��ng): 320 - 950 nm
�z�y(c��)��: 256 channel silicon photodiode array
���V�ɘ�: 3.3nm/pixel
���V����: 0.3nm
��(sh��)�Hʹ��ͨ��: 190
����Ͷ�(4 ms integration time):
20 W m-2 nm-1 (at 400nm)
12 W m-2 nm-1 (at 500nm)
15 W m-2 nm-1 (at 700nm)
����NEI(8 sec integration time):
0.8 μW m-2 nm-1 (at 400nm)
0.6 μW m-2 nm-1 (at 500nm)
0.8 μW m-2 nm-1 (at 700nm)